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 WEITRON
Small Signal MOSFET N-Channel
3 DRAIN
2N7000
TO-92 Features:
*Low On-Resistance : 5 *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns
2 GATE 1
SOURCE
1. SOURCE 2. GATE 3. DRAIN
1 2 3
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(1) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD R JA TJ, Tstg Value 60 20 200 500 350 357 -55 to 150 Unit V V mA mA mW C/W C
Device Marking
2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature
WEITRON
http://www.weitron.com.tw
2N7000
Electrical Characteristics
Characteristic (TA=25 C Unless otherwise noted) Symbol Min Max Unit
Static
Drain-Source Breakdown Voltage VGS=0V, ID=10 uA Gate-Threshold Voltage VDS=VGS , ID=1.0 mA Gate-body Leakage VDS=0V, VGS=15V Zero Gate Voltage Drain Current VDS=48V, VGS=0V VDS=48V, VGS=0V, Tj=125 C On-State Drain Current (2) VGS=4.5V, VDS=10V Drain-Source On-Resistance (2) VGS=10V, ID=500mA VGS=4.5V, ID=75mA Forward Transconductance (2) VDS=10V, ID=200mA Drain-Source On-Voltage VGS=10V, ID=500mA VGS=10V, ID=75mA V(BR)DSS VGS (th) IGSS IDSS ID (on) 60 0.8 3.0 -10 1.0 1.0 5.0 6.0 V V nA
-
-
uA mA mA us V
75
rDS (on)
gfs VSD(on)
100
2.5 0.45
-
Dynamic(1)
Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Ciss Coss Crss
-
60 25 5.0 PF
Switching (1) (3)
Turn-On Time VDD=15V, RL=30 ,ID=500mA VGEN=10V, RG=25 Turn-Off Time VDD=15V, RL=30 , ID=500mA VGEN=10V, RG=25 td(on)
-
10
nS
td(off )
10
nS
Note: 1. For Design Aid Only not Subject to Production Testing.
_ _ 2. Pulse Test : PW< 300s, Duty Cycle < 2% 3. Switching Time is Essentially Independent of Operating Temperature .
WEITRON
http://www.weitron.com.tw
2N7000
2.0 1.8 I D , DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS , DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25 C I D , DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
1.0 VDS = 10 V 0.8 - 55 C 125 C 25 C
0.6
0.4
0.2
0
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS , GATE SOURCE VOLTAGE (VOLTS)
9.0
10
FIG. 1 Ohmic Region
FIG.2 Transfer Characteristics
rDS(on) , STATIC DRAIN-SOURCE ON-RESIST ANCE (NORMALIZED)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 60 - 20 + 20 + 60 T , TEMPERATURE ( C) + 100 VGS = 10 V ID = 200 mA
VGS(th) , THRESHOLD VOL TAGE (NORMALIZED)
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 - 60 - 20 + 20 + 60 T , TEMPERATURE ( C) + 100 + 140 VDS = VGS ID = 1.0 mA
+ 140
FIG.3 Temperature versus Static Drain-Source On-Resistance
FIG.4 Temperature versus Gate Threshold Voltage
WEITRON
http://www.weitron.com.tw
2N7000
TO-92 Outline Dimensions
E
unit:mm
TO-92
H
C
J K
G
Dim A B C D E G H J K L
Min Max 5.100 3.000 2.030 1.100 0.600 0.380 1.100 0.360 0.500 4.400 3.430 4.700 4.300 1.270TYP 2.440 2.640 14.100 14.500
B
L
WEITRON
http://www.weitron.com.tw
D
A


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